Table 1

Summary of relevance of ΔE1, ΔE2, and ΔE3 in CdSe and ZnS NPs.

Host Dopant (Ln3+) ΔE1 [E (VB)–E (Ln3+ Ground Energy Level) [Hole trapping] ΔE2 [E (CB)–E (Ln3+ Luminescent Energy Level) [Electron trapping] ΔE3 [E (CB)–E (Ln2+ Ground Energy Level) [Alternate excitation pathway through involvement of Ln2+ ground energy level]
CdSe/ZnS Pr3+ Marginally not suitable Marginally suitable Not suitable
CdSe/ZnS Nd3+ Not suitable Not suitable Not suitable
CdSe/ZnS Sm3+ Not suitable Not suitable Suitable
CdSe/ZnS Eu3+ Not suitable Not suitable Suitable
CdSe/ZnS Tb3+ Suitable Suitable Not suitable
CdSe/ZnS Dy3+ Not suitable Not suitable Not suitable
CdSe/ZnS Ho3+ Not suitable Not suitable Not suitable
CdSe/ZnS Er3+ Not suitable Not suitable Not suitable
CdSe/ZnS Tm3+ Not suitable Marginally suitable Marginally suitable
CdSe/ZnS Yb3+ Not suitable Not suitable Suitable, better in ZnS [5240 cm−1 in CdSe/Yb and 13,710 cm−1 in ZnS/Yb]