Various damage mechanisms in carbon and silicon materials under femtosecond X-ray irradiation

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Fig. 12

Comparison of the calculated and experimental [109] reflectivity of silicon at 625 nm probe wavelength under 70.5° incidence for the fluence corresponding to 1.08 eV/atom absorbed dose. The calculated data were convolved with 60 fs gaussian probe pulse. The figure is reproduced from reference [68].

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